Electronic device manufacturing methods

ABSTRACT

In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for the manufacture of anelectronic device which has at least a transparent conductive layer,such as a semiconductor photoelectric conversion device, field effecttransistor, liquid crystal display or the like, and more particularly toimprovement in an electronic device manufacturing method which includesat least a step of forming a transparent conductive layer member and astep of patterning the transparent conductive layer member by one ormore laser beams into the transparent conductive layer.

2. Description of the Prior Art

Heretofore there has been proposed an electronic device manufacturingmethod which includes at least a step of forming a transparentconductive layer member and a step of patterning the transparentconductive layer member by means of a laser beam to form a transparentconductive layer. Compared with another manufacturing method whichemploys a photolithography technique for the formation of such a layer,the abovesaid method excels in that the transparent conductive layer canbe formed without any defects. The reason for this is that in the caseof forming the transparent conductive layer by photolithography, aphotoresist mask therefor is prone to pinholing or exfoliation at itsmarginal edges, which results in the formation of defects, whereas themethod utilizing the patterning process using a laser beam has no suchfactors which cause defects.

With the conventional method employing the patterning technique for theformation of the transparent conductive layer through use of a laserbeam, it is a general practice to use a YAG laser which emits a laserbeam having a relatively long wavelength of about 1060 nm.

The absorption coefficient of the abovesaid the transparent conductivelayer member for the laser beam of such a relatively long wavelength isextremely small. For example, when the transparent conductive layermember consists principally of a sublimable metallic oxide such as SnO₂,In₂ O₃ or ITO (Indium-Tin Oxide), its absorption coefficient is 10² /cmor less. The reason for this is as follows: In the case where the laserbeam has a wavelength as large as 1060 nm, its optical energy is verysmaller than the optical energy band gap of the transparent conductivelayer member. For instance, in the case of the laser beam having thewavelength of 1060 nm, its optical energy is about 1.23 eV. On the otherhand, when the transparent conductive layer member consists principallyof such a sublimable metallic oxide as SnO₂, In₂ O₃ or ITO, its opticalenergy band gap is in the range of 3 to 4 eV.

For the patterning of the transparent conductive layer member by thelaser beam, it is necessary that the beam be high-powered, since theabsorption coefficient of the transparent conductive layer member forthe laser beam is extremely small. When the transparent conductive layermember is as thin as 2 μm or less, it is feared that a substrate andother layers underlying it is damaged or patterned. Also it is fearedthat the marginal edges of the transparent conductive layer are swollenor exfoliated.

Furthermore, in the case of the laser beam having such a relatively longwavelength of 1060 nm or so, it is difficult to reduce its minimum spotdiameter to a small value of 100 μm or less. Therefore, it is difficult,with the conventional manufacturing method, to finely form thetransparent conductive layer with high precision. In addition, in thecase of simultaneously forming a plurality of transparent conductivelayers, they cannot be spaced apart a small distance of 100 μm or less.This imposes severe limitations on the fabrication of a small andcompact electronic device having the transparent conductive layer.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a novelmethod for the manufacture of an electronic device having at least atransparent conductive layer which is free from the abovesaid defects ofthe prior art.

The electronic device manufacturing method of the present inventionincludes at least a step of forming a transparent conductive layermember and a step of scanning the transparent conductive layer member bya spot-shaped laser beam or exposing the transparent conductive layermember to irradiation by one or more linear laser beams, thereby formingthe transparent conductive layer. In this case, the laser beam has awavelength of 400 nm or less which is smaller than in the past and hasan optical energy greater than the optical energy band gap of thetransparent conductive layer member.

With the use of the laser beam having such a short wavelength equal toor less than 400 nm, the absorption coefficient of the transparentconductive layer member for the laser beam is far larger than theabsorption coefficient for the laser beam having the long wavelength ofabout 1060 nm. For example, the absorption coefficient of thetransparent conductive layer member is 10⁴ /cm or more, which is morethan 100 times larger than the absorption coefficient (approximately 10²/cm) for the laser beam of the 1060 nm or so wavelength used in thepast. Therefore, the laser beam need not be high-powered. Further, evenif the transparent conductive layer member to be patterned is as thin as2 μm or less, there is no possibility of damaging or patterning theunderlying substrate or layer by the laser beam. Further, the method ofthe present invention is free from the fear of swelling or exfoliatingthe marginal edges of the transparent conductive layer as a result ofthe patterning thereof.

Moreover, the laser beam of the 400 nm or less wavelength can be easilyreduced to such a minimum spot diameter or width as small as 100 μm orless on the transparent conductive layer member. This permits theformation of the transparent conductive layer with higher precision andmore finely than in the past. Moreover, in the case of forming aplurality of such transparent conductive layers, they can be spacedapart such a small distance as 100 μm or less. Accordingly, themanufacturing method of the present invention provides a smaller andmore compact electronic device having a plurality of transparentconductive layers than does the conventional method.

In accordance with another aspect of the present invention, a linearlaser beam or beams, which are obtained by once diverging the laser beamfrom the laser beam source and then applying the diverged laser beam toa cylindrical lens or lenses, are used for irradiating the transparentconductive layer member. By preselecting the length of such a linearlaser beam or beams greater than the width of the transparent conductivelayer member and by moving the beam or beams incessantly orintermittently in a predetermined direction, a square, rectangular orstrip-like transparent conductive layer can easily be obtained from thetransparent conductive layer member in a short time.

Other objects, features and advantages of the present invention willbecome more fully apparent from the following detailed description takenin conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to H are schematic sectional views illustrating, by way ofexample, a sequence of steps involved in the manufacture of asemiconductor photoelectric conversion device having a plurality ofsemiconductor photoelectric conversion transducers according to thepresent invention;

FIGS. 2A to D are schematic sectional views explanatory of a conductivelayer which is formed on a substrate in the fabrication of thesemiconductor photoelectric conversion device;

FIGS. 3A and B are schematic sectional views explanatory of anon-single-crystal semiconductor layer which is formed on the conductivelayer in the fabrication of the semiconductor photoelectric conversiondevice;

FIGS. 4A to C are schematic sectional views explanatory of a conductivelayer which is formed on the non-single-crystal semiconductor layer inthe fabrication of the semiconductor photoelectric conversion device;and

FIG. 5 is a schematic diagram showing how a transparent conductive layeris patterned by means of a plurality of linear laser beams into aplurality of transparent conductive layers.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring first to FIG. 1, the manufacture of a semiconductorphotoelectric conversion device as the electronic device according tothe present invention starts with the preparation of a substrate 1 (FIG.1A).

The substrate 1 has a surface 2 of an organic or inorganic insulator. Assuch a substrate 1, for example, a synthetic resin substrate can be usedwhich is transparent or nontransparent. It is also possible to employ aceramic substrate, a transparent glass substrate, and a substrate whichhas an insulating film of synthetic resin, a silicon oxide, or the like,deposited on a stainless steel or metal plate.

A conductive layer member 3 is formed on the substrate 1, by means of aknown evaporation method or CVD method (FIG. 1B). The conductive layermember 3 has a thickness of 2 μm or less.

The conductive layer member 3 may be formed as a transparent conductivelayer member. In this case, the substrate 1 is transparent. Thetransparent conductive layer member 3 is constituted principally of asublimable metallic oxide such as SnO₂, In₂ O₃ or ITO (Indium-Tinoxide), a sublimable metallic nonoxide material such as a Si-Cr or Si-Nialloy, or a sublimable metallic nitride such as a SbN, InN or Sn₅ N₄.

The conductive layer member 3 may also be formed as a nontransparentconductive layer. In such a case, the substrate 1 need not betransparent. The nontransparent conductive layer member 3 is constitutedprincipally of a sublimable metal such as Cr, a Cr-Cu alloy (containing0.1 to 50 Wt % of Cu), a Cr-Ag alloy (containing 0.1 to 50 wt % of Ag),or aCrN alloy (containing 0.1 to 50 wt % of N), or a non-sublimablemetal such as Al, Cu, or Ag.

Further, the conductive layer member 3 may also be a laminate memberwhich comprises a transparent conductive layer constituted principallyof the abovesaid sublimable metallic oxide, sublimable metallicnonoxide, or sublimable metallic nitride, and a nontransparentconductive layer constituted principally of the abovesaid sublimablemetal, or nonsublimable metal. In this case, the nontransparentconductive layer is formed on the side of the substrate 1, and thesubstrate 1 need not be transparent.

Next, the conductive layer member 3 is subjected to patterning by theuse of one or more laser beams, forming a plurality of conductive layers5 which are each isolated from adjacent ones by a groove 4 (FIG. 1C).

When the conductive layer member 3 is transparent, the laser beam orbeams used are spot-shaped or linear laser beams which have a wavelengthof 400 nm or less and optical energy (3.1 eV or more) greater than theoptical energy band gap of the transparent conductive member 3.

Where the spot-shaped laser beam or beams are used, they have a 3 to 60μm spot diameter in cross section on the transparent conductive layermember 3. The spot-shaped laser beam or beams may be pulsed laser beamsthat have a duration of 50 nano-seconds or less and frequency of 1 to100 Hz.

As the spot-shaped pulsed laser beam or beams, it is possible to employa pulsed laser beam or beams of a 193 nm or so (ArF), 248 nm or so(KrF), 308 nm or so (XeCl), or 315 nm or so (XeF) wavelength which isobtainable with an excimer laser, a laser beam of a 363 nm or so or 351nm or so wavelength which is obtainable with an argon laser, or a laserbeam of a 337 nm or so wavelength which is obtainable with a nitrogenlaser.

When the linear pulsed laser beams are used, they can be created in sucha manner as described below in conjunction with FIG. 5.

A square- or rectangular-sectioned pulsed laser beam of a smallcross-sectional area, which is available from the aforesaid excimer,argon or nitrogen laser beam source 51, for example, arectangular-sectioned pulsed laser beam 52 which measures 16×20 mm incross section is applied to a beam magnifier 53 to obtain a pulse laserbeam 54 which is similar in cross section to the laser beam 52 but has alarger cross-sectional area than the latter. In order words, thediverged pulsed laser beam 54 is obtained from the laser beam 52. Next,the pulsed laser beam 54 is applied via a reflector 55 to a cylindricallens array 57 which has a plurality of cylindrical lenses 56 arranged ina common plane, by which are obtained a plurality of linear pulsed laserbeams 57, for example, 30 cm long and 15 μm wide, which are converged onthe transparent conductive layer member 13.

The conductive layer member 3 is transparent, and when the abovesaidspot-shaped or linear pulsed laser beam or beams having a wave length400 nm or less are therefore used, since the stop-shaped or linear laserbeam or beams have such a short wavelength of 400 nm or less, theabsorption coefficient of the conductive layer member 3 for the laserbeam is more than 100 times larger than the absorption coefficient for alaser beam having a long wavelength of about 1060 nm which is obtainablewith a YAG laser. Accordingly, the conductive layer member 3 iseffectively heated by the laser beam locally at the position of itsirradiation. On the other hand, since the conductive layer member 3 isas thin as 2 μm or less, it does not unnecessarily transfer therethroughheat resulting from the irradiation by the laser beam, namely, the heatgenerated in the layer member 3 does not unnecessarily escape therefromto the outside through the layer member 3 itself. Moreover, thesubstrate 1 has the insulating surface, and hence it also prevents theheat generated in the conductive layer member 3 from unnecessarilyescaping therefrom to the outside through the substrate 1. Accordingly,the material of the conductive layer member 3 is effectively sublimed atthe position of irradiation by the laser beam. In this case, it ispreferable that the scanning or irradiation of the transparentconductive layer member 3 by the abovesaid spot-shaped or linear pulsedlaser beam or beams having a 400 nm or less wavelength be carried outunder a diminished pressure of 10⁻⁵ torr or less. This ensures moreeffective sublimation of the material forming the transparent conductivelayer member 3.

As a result of this, transparent conductive layers 5 are neatly formed,along with the grooves 4, as shown in FIG. 2A. In this case, there is nopossibility that the material of the transparent conductive layers 5,molten by the laser beam irradiation, is deposited on the marginal edgesof the transparent conductive layers 5, as indicated by 6, in FIG. 2B.Further, since the laser beam is effectively absorbed by the conductivelayer member 3 because of its short wavelength, it does not inflict onthe substrate unnecessary damages such as depressions and cracks asindicated by 7 and 8 in FIGS. 2C and D.

The effects described just above are prominent especially when theconductive layer member 3 is a transparent conductive layer member whichis constituted principally of the aforementioned sublimable metallicoxide, sublimable metallic nitride or sublimable metallic nonoxide.Incidentally, even if the conductive layer member 3 is a nontransparentconductive layer which is constituted principally of the aforementionednonsublimable metal, or a laminate member comprised of the abovesaidtransparent conductive layer and the nontransparent conductive layerwhich is constituted mainly of the aforementioned nonsublimable metal,the same effect as mentioned above can be obtained through use of thespot-shaped or linear laser beam or beams of a 400 nm or lesswavelength.

FIG. 5 shows the case in which the transparent conductive layer member 3formed on the substrate 1, which is mounted on a table 59, is patternedby four linear laser beams into five transparent conductive layers 5. Inthis case, a number of such transparent conductive layers 5 can also beeasily obtained by moving the table 59 while scanning or irradiating thetransparent conductive layer member 3 by the spot-shaped or linear laserbeam or beams. In the case of FIG. 5, the table 59 need not be movedsince five transparent conductive layers 5 are formed by using fourlaser beams as mentioned above.

Next, a non-single-crystal semiconductor layer member 11 is formed, by aknown CVD, low-pressure CVD, plasma or glow discharge CVD, or photo CVDmethod, on the substrate 1 so that it covers the conductive layers 5 andextends into the grooves 4 (FIG. 1D).

The non-single-crystal semiconductor layer member 11 has a thickness,for instance, of 2 μm or less.

The non-single-crystal semiconductor layer member 11 has a PN junctionstructure wherein a P-type non-single-crystal semiconductor layer andN-type non-single-crystal semiconductor layer are laminated one on theother in this order or in the reverse order, or a PIN junction structurewherein a P-, I- and N-type non-single-crystal semiconductor layers arelaminated one on another in this order or in the reverse order.

The non-single-crystal semiconductor layer member 11 may be constitutedmainly of a sublimable semiconductor material such as Si, Si_(x) Ge₁₋₄(where 0<x<0.5), Si_(x) C_(1-x) (where 0<x<1), Si₃ N_(n-x) (where 0<x<2)or SiO_(2-x) (where 0<x<1), and the layer 11 has introduced thereinhydrogen or a halogen as a dangling bond neutralizer.

Next, the non-single-crystal semiconductor layer member 11 is subjectedto patterning by one or more laser beams, forming a plurality ofnon-single-crystal semiconductor layers 13 each isolated from adjacentones by a groove 12 (FIG. 1E).

In this case, the grooves 12 are each formed to expose each conductivelayer 5 in the vicinity of each groove 4. Accordingly, eachnon-single-crystal semiconductor layer 13 extends on one conductivelayer 5 and into the groove 4 and further onto the adjoining conductivelayer 5 slightly.

The patterning of the non-single-crystal semi-conductor layer member 11may be effected using the same spot-shaped or linear laser beam or beamshaving a wavelength of 400 nm or less as those for the formation of thetransparent conductive layers 5. Therefore, no detailed description willbe repeated.

In the case where the spot-shaped or linear laser beam or beams having awavelength 400 nm or less are used, the absorption coefficient of thenon-single-crystal semiconductor layer 11 for the laser beam or beams isalso large as is the case with the aforementioned conductive layermember 3, because the laser beam used has such a short wavelength as 400nm or less. Therefore, the non-single-crystal semiconductor layer member11 is effectively heated at the position of irradiation by the laserbeam as in the case of the aforementioned conductive layer member 3.Further, since the non-single-crystal semiconductor layer member 11 isas thin as 2 μm or less, it does not transfer laterally therethrough theheat generated therein, thereby preventing the heat from unnecessarilyescaping from the layer member 11 to the outside, as describedpreviously. Moreover, in the case where the non-single-crystalsemiconductor layer member 11 is constituted principally of thesublimable semiconductor, as referred to previously. thenon-single-crystal semiconductor layers 13 can be formed neatly, alongwith the grooves 12, as shown in FIG. 3A, and it is possible to preventthe material of each non-single-crystal semiconductor layer 13, moltenby the laser beam irradiation, from being deposited on its marginaledge, as indicated by 14 in FIG. 3B, and the conductive layer 5 frombeing hollowed, by the laser beam, thereby avoiding the formationtherein of a deep depression which may sometimes reach the substrate 1,as indicated by 15 in FIG. 3B.

Next, a conductive layer member 21, which covers the non-single-crystalsemiconductor layers 13 and extends into the grooves 12, is formed onthe substrate 1 by the same method as that for the formation of theconductive layer 3 (FIG. 1F).

The conductive layer member 21 has a thickness of 2 μm or less.

The conductive layer member 21 may be formed as a transparent conductivelayer which is constituted principally of the sublimable metallic oxide,sublimable metallic nitride, or sublimable metallic nonoxide materialmentioned previously with regard to the conductive layer 3. In thiscase, the substrate 1 need not be transparent.

The conductive layer member 21 may also be formed as a nontransparentconductive layer which is constituted principally of the aforesaidsublimable metal. In such a case, the substrate 1 is transparent.

Moreover, the conductive layer member 21 may also be formed as alaminate member which composed of a transparent conductive layerconstituted mainly of the aforesaid sublimable metallic oxide, orsublimable metallic nonoxide material and a nontransparent conductivelayer which is constituted mainly of the aforementioned sublimable ornonsublimable metal. In this case, the transparent conductive layer isformed on the side of the non-single-crystal semiconductor layer 13, andthe substrate 1 is transparent.

Next, the conductive layer member 21 is subjected to patterning by oneor more laser beams, forming a plurality of conductive layers 23 whichare each isolated from adjacent ones by a groove 22 (FIG. 1G).

In this case, the grooves 22 are each formed to expose one of thenon-single-crystal semiconductor layers 13 in the vicinity of one of thegrooves 12. Accordingly, each conductive layer 23 extends on one of thenon-single-crystal semiconductor layers 13 and down into one of thegrooves 12, wherein it is connected to the underlying conductive layer5, and it further extends slightly onto the adjoining non-single-crystalsemiconductor layer 13.

The laser beam used for the patterning of the conductive layer member 21into the conductive layers 23 may be the same spot-shaped or linearpulsed laser beam or beams having a wavelength of 400 nm or less asthose for the formation of the transparent conductive layers 5.Therefore, no detailed description will be repeated.

In the case where the conductive layer member 21 is transparent and thespot-shaped or linear laser beam or beams having 400 nm or lesswavelength are used therefore, the absorption coefficient of theconductive layer member 21 for such a laser beam or beams are large asdescribed previously in connection with the formation of the transparentconductive layers 5. On the other hand, the conductive layer member 21is thin and its portion on the side of the non-single-crystalsemiconductor layer 13 is constituted mainly of the sublimable metallicoxide, sublimable metallic nitride, sublimable metallic nonoxide, orsublimable metal, so that the conductive layers 23 are neatly formed,along with the grooves 22. That is to say, there is no possibility thatthe underlying non-single-crystal semiconductor layers 13 are hollowed,by the laser beam, to form therein deep depressions which may sometimesreach the underlying conductive layers 5, as indicated by 24 in FIG. 4B,and that the conductive layers 23 are exfoliated at their marginaledges, as indicated by 25 in FIG. 4C.

Next, a passivation film 31 as of silicon nitride, which covers theconductive layers 23 and extends into the grooves 22, is formed by, forinstance, a known plasma CVD method, and a protective film 32 of asynthetic resin is formed on the passivation film 31.

In such a manner as described above, a semiconductor photoelectricconversion device 42 is fabricated in which a plurality of semiconductorphotoelectric transducers 41, each comprising the conductive layer 5,the non-single-crystal semiconductor layer 13 and the conductive layer23, are connected in series through the portions of the conductivelayers 23 extending into the grooves 12.

With the manufacturing method of the present invention described above,the conductive layer 5, the non-single-crystal semiconductor layer 13and the conductive layer 23, which make up each semiconductorphotoelectric transducer 41, can be easily formed with high accuracy andfinely, without damaging them or exfoliating their marginal edges andwithout cracking the substrate 1.

Further, the respective layers of each semiconductor photoelectrictransducer 41 are isolated from the layers of the adjoining transducer41 by a groove of a width substantially equal to the diameter or widthof the laser beam, which is as small as 3 to 60 μm, so that asemiconductor photoelectric conversion device 42 can easily bemanufactured in which a plurality of semiconductor photoelectrictransducers 41 are arranged with a high density.

While in the foregoing present invention has been described as beingapplied to the manufacture of a semiconductor photoelectric conversiondevice, it will be apparent that the invention is also applicable to themanufacture of various semiconductor devices each of which has at leasta transparent conductive layer.

Further, although the foregoing description has been given of the caseof cutting a transparent conductive layer member by a linear laser beamor beams into a plurality of transparent conductive layers which areeach separated from adjacent ones by a groove of substantially the samewidth as that of the laser beam or beams, it is also possible to form anarrower transparent conductive layer by moving the linear laser beam ina direction, for instance, perpendicular to its lengthwise direction toremove the transparent conductive layer member over a width larger thanthat of the linear laser beam.

It will be apparent that many modifications and variations may beeffected without departing from the scope of the novel concepts of thepresent invention.

What is claimed is:
 1. A method for the manufacture of an electronicdevice which is provided with at least a transparent conductive layer,comprising the steps of:forming a transparent conductive layer on atransparent substrate having a surface of an insulator selected from thegroup consisting of organic and inorganic insulators, or on anon-single-crystal semi-conductor layer member, wherein the transparentconductive layer member has a thickness of two μm or less and consistsprincipally of a sublimable metallic compound selected from the groupconsisting of oxides and nitrides, and wherein the non-single-crystalsemi-conductor layer member consists principally of a sublimablesemi-conductor which includes a dangling bond neutralizer selected fromthe group consisting of hydrogen and halogen; and exposing thetransparent conductive layer member to irradiation by one or more pulsedlaser beams which are squeezed in only one direction after expansion incross-section and have a wavelength of 400 nm or less and optical energygreater than the optical energy band gap of the transparent conductivelayer member, thereby forming the transparent conductive layer which hasa thickness of 2 μm or less and consists principally of the sublimablemetallic oxide or nitride on the substrate or the non-single-crystalsemi-conductor layer member.
 2. A method for the manufacture of anelectronic device which is provided with at least a non-transparentconductive layer, comprising the steps of:forming a non-transparentconductive layer member on a substrate having a surface of an insulatorselected from the group consisting of organic and inorganic insulators,or on a non-single-crystal semi-conductor layer member, wherein thenon-transparent conductive layer consists principally of a metalselected from the group consisting of sublimable and non-sublimablemetals, and wherein the non-single-crystal semi-conductor layer memberconsists principally of a sublimable semi-conductor which includes adangling bond neutralizer selected from the group consisting of hydrogenand halogen; and exposing the non-transparent conductive layer member toirradiation one or more pulsed laser beams which are squeezed in onlyone direction after expansion in cross-section and have a wave length of400 nm or less and optical energy greater than the optical energy bandgap of the transparent conductive layer member, thereby forming thenon-transparent conductive layer which has a thickness of 2 μm or lessand consists principally of the sublimable or non-sublimable metal onthe substrate or the non-single-crystal semi-conductor layer member. 3.A method for the manufacture of an electronic device which is providedwith at least a first laminate member of transparent and non-transparentconductive layers, comprising the steps of:forming a second laminatemember of transparent and non-transparent conductive layer member on asubstrate having a surface of an insulator selected from the groupconsisting of organic and inorganic insulators or on anon-single-crystal semi-conductor layer member, wherein the transparentconductive layer of the second laminate member consists principally of asublimable metallic compound selected from the group consisting ofoxides and nitrides wherein the second laminate member has a thicknessof 2 μm or less, wherein the nontransparent conductive layer of thesecond laminate member consists principally of a metal selected from thegroup consisting of sublimable metals and non-sublimable metals, whereinthe non-single-crystal semi-conductor layer member consists principallyof a sublimable semiconductor which includes a dangling bond neutralizerselected from the group consisting of hydrogen and halogen; and exposingthe second laminate member to irradiation by one or more pulses laserbeams which are squeezed in only one direction after expansion incross-section and have a wave length of 400 nm or less and opticalenergy greater than the optical energy band gap of the transparent andnon-transparent layers of the second laminate member, thereby formingthe first laminate member which has a thickness of 2 μm or less, whereinthe transparent conductive layer of the first laminate member consistsprincipally of the sublimable metallic oxide or nitride, and wherein thenon-transparent conductive layer for the first laminate member consistsprincipally of the sublimable or nonsublimable metal on the substrate orthe non-single-crystal semi-conductive layer member.
 4. A method for themanufacture of an electronic device which is provided with at least anon-single-crystal semiconductor layer, comprising the steps of:forminga non-single-crystal semiconductor layer member on a transparent ornon-transparent conductive layer or on a laminate member of transparentand non-transparent conductive layers, wherein the non-single-crystalsemiconductor layer has a thickness of 2μm or less, wherein thenon-single-crystal semiconductor layer consists principally of asublimable semiconductor which includes dangling bond neutralizerselected from the group consisting of hydrogen and halogen, wherein thetransparent conductive layer of the second laminate member consistsprincipally of a sublimable metallic compound selected from the groupconsisting of oxides and nitrides, wherein the second laminate memberhas a thickness of two μm or less, and wherein the non-transparentconductive layer of the second laminate member consists principally of ametal selected from the group consisting of sublimable metals andnon-sublimable metals; and exposing the non-single-crystal semiconductorlayer member to irradiation by one or more pulsed laser beams which aresqueezed in only one direction after expansion in cross-section and havea wave length of 400 nm or less and optical energy greater than theoptical energy band gap of the non-single-crystal semiconductive layermember, thereby forming the non-single-crystal semiconductor layer whichhas a thickness of 2 μm or less and consists principally of thesublimable semi-conductor on the transparent or non-transparentconductive layer or the laminate member.
 5. The manufacturing methodaccording to claims 1, 2, 3 or 4 wherein the linear-shaped pulsed laserbeam or beams are excimer laser beams having a wavelength of about 193nm (ArF), about 248 nm (KrF), about 308 nm (XeCl), or about 315 nm(XeF), argon laser beams having a wavelength of about 363 or about 351nm, or nitrogen laser beams having a wavelength of 337 nm.
 6. Themanufacturing method according to claims 1, 2, 3 or 4 wherein thelinear-shaped pulsed laser beam or beams have a width of 50 nano-secondor less.
 7. The manufacturing method according to claim 1, 2, 3 or 4wherein the linear-shaped pulsed laser beam irradiation is effected in alow-pressure atmosphere.
 8. The manufacturing method according to claim7 wherein the low-pressure atmosphere has a degree of vacuum of 10⁻⁵torr or less.
 9. The manufacturing method according to claims 1, 2, 3 or4 wherein the linear-shaped pulsed laser beam or beams are obtained byonce diverging linear-shaped pulsed laser beam from a pulsed laser beamsource and then applying the diverged beam to a cylindrical lens orlenses to converge it.
 10. The manufacturing method according to claim 9wherein the linear-shaped pulsed laser beam source is an excimer pulsedlaser beam source, argon linear-shaped pulsed laser beam source, ornitrogen pulsed laser beam source.
 11. The manufacturing methodaccording to claim 9 wherein the linear-shaped pulsed laser beam is 3 to60 μm wide in cross section on the layer member.
 12. The method asdefined by claim 1 or 3 in which said sublimable metallic oxide isselected from the group consisting of Sn O₂, In₂ O₃, and ITO (Indium-TinOxide), and in which said sublimable metallic nitride is selected fromthe group consisting of SbN, InN and Sn₃ N₄.
 13. The method as definedby claims 1, 2, 3 or 4 in which said sublimable semi-conductor materialis selected from the group consisting of Si, Si_(x) Ge_(1-x) (where0<x<0.5), Si_(x) C_(1-x) (where 0<x<1), Si₃ N_(4-x) (where 0<x<2), andSiO_(2-x) (where 0<x<1).
 14. The method as defined by claims 2 or 3 inwhich said sublimable metal is selected from the group consisting of Cr,Cr-Cu alloy, and Cr-N alloy and in which said non-sublimable metal isselected from the group consisting of Al, Cu and Ag.